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- mosfet
IRF510 N Channel Power MOSFET
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Drain-to-source voltage VDS: 100V Drain-to-source current ID: 5.6A On-state resistance (drain-to-source resistance) RDS: 0.54Ω Operating temperature range: -55˚C to 175˚C Gate charge Qg: 8.3nC Gate-source voltage VGS: ±20V Maximum power dissipation: 43W Maximum voltage required to conduct: 2V to 4V Package type: TO-220AB
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- Uncategorized
IRF630 N-Channel Power MOSFET
- KSh 100.00
- Specifications; Channel Type: N Channel Drain Source Voltage Vds: 200V Continuous Drain Current Id: 9A Drain Source On State Resistance: 0.4ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V
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- Mosftets, Transistors
IRF730 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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- Uncategorized
IRF740 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package: TO-220. Drain-to-Source Breakdown Voltage: 400 V. Gate-to-Source Breakdown Voltage: +/- 20 V. Hole Diameter: 3.8mm (0.15in) Weight: 2g (0.07oz) Continuous Drain Current: 10 A (with adequate heat sinking, consider our TO-220 Heat Sink Set) Minimum Operating Temperature: -55°C. Maximum Operating Temperature: 150°C. Pin Spacing Pitch: 2.54mm (0.1in)
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- Mosftets, Transistors
IRF830 N-Channel Power MOSFET
- KSh 100.00
- Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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- mosfet, Mosftets, Transistors
SL7H2BF P-Channel Power MOSFET
- KSh 50.00
- Specifications of SL7H2BF Drain-Source Voltage (Vds): Up to 100V. Continuous Drain Current (Id): Ranges from 20A to 100A. Gate Threshold Voltage (Vgs(th)): Usually between 2V and 4V. Total Gate Charge (Qg): Low, facilitating high-speed switching. Operating Temperature Range: From -55°C to +175°C.
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- Transistors
TIP142T Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP142T Transistor Type: NPN Maximum Continuous Collector Current: 10 A Maximum Collector Emitter Voltage: 100 V Maximum Emitter Base Voltage: 5 V Package Type: TO-220 Mounting Type: Through Hole Pin Count: 3 Transistor Configuration: Single Number of Elements per Chip: 1 Minimum DC Current Gain: 500 Maximum Collector Base Voltage: 100 V Maximum Collector Emitter Saturation Voltage: 3…
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- Transistors
TIP42C Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP42C Transistor Polarity: PNP Collector Emitter Voltage Max: 100V Continuous Collector Current: 6A Power Dissipation: 65W Transistor Case Style: TO-220 Transistor Mounting: Through Hole
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- Transistors
2N2369 NPN High Speed Switching Transistor
- KSh 50.00
- Features of 2N2369 include; Has a Collector-Emitter Voltage of 15 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 40 V Has an Emitter-Base Voltage of 4 V To add on that, has a Collector Power Dissipation of 0.36 W Moreover, has a Transition Frequency is 500 MHz Last but not least, has…
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- Transistors
2N5401 PNP High Voltage Transistor
- KSh 10.00
- Features of 2N5401 includes; It has a High collector breakdown voltage Has a DC Current Gain of up to 100 It has an Operating temperature range of -55ºC to +150ºC Collector-Emitter Voltage of 150 V Also has a Collector Current of 0.6 A It also has a Collector-Base Voltage of 160 V Emitter-Base Voltage of 5V Collector Dissipation - 0.31…
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- Transistors
A733 PNP Epitaxial Silicon Transistor
- KSh 10.00
- Features of A733 include; It has a DC Current Gain of 90 to 600 Has a Collector-Emitter Voltage of -50 V Also it has a Collector Current of -100 mA It also has a Collector-Base Voltage of -60 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Power Dissipation of 250 mW Moreover, it…
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- Transistors
BC109 Low Power Bipolar Transistor
- KSh 50.00
- Features of BC109 include; Has a Collector-Emitter Voltage of 25 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 30 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Power Dissipation of 0.3 W Moreover, has a Transition Frequency is 150 MHz Last but not least, has…
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