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- Transistors
BC547 NPN General Purpose Transistor
- KSh 10.00
- BC547 Transistor Features It is a Bi-Polar NPN Transistor Has a DC Current Gain of 800 maximum Its Continuous Collector current is 100mA Has an Emitter Base Voltage of 6V Maximum Base Current of 5 mA Lastly, available in To-92 Package
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- Transistors
BC548 NPN Bi-polar Junction Transistor
- KSh 10.00
- 74HC273 is an octal positive-edge triggered D-type flip-flop. The device has clock (CP) and master reset (MR) inputs.A LOW on MR forces the outputs LOW independently of clock and data inputs.
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- Transistors
C2655 NPN Silicon Epitaxial Transistor
- KSh 10.00
- Features of C2655 include; It has a low saturation voltage of 0.5 V Has a Collector-Emitter Voltage of 50 V Also has a Collector Current of 2A It also has a Collector-Base Voltage of 50 V Has an Emitter-Base Voltage of 5V To add on that, has a high Collector Power Dissipation of 900 mW Moreover, has a Transition Frequency…
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- Transistors
C945 Bipolar NPN Amplifier Transistor
- KSh 10.00
- Features of C945 include; It is a Japanese High frequency amplifier NPN Transistor Has a Current Gain (hFE) of 70 to 700 (high linearity) Also has a Collector Current of 150 mA Collector-Emitter Voltage of 50 V It also has a Collector-Base Voltage of 60V Emitter-Base Voltage of 5V Transition Frequency is 150 MHz Available only in To-92 Package
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- mosfet, Mosftets, Transistors
IRF8010 N Channel MOSFET Transistor
- KSh 200.00
- Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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- mosfet, Mosftets, Transistors
NDP6020P P-Channel Mosfet Transistor
- KSh 100.00
- Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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- Transistors
S9012 PNP Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9012 include; It has an Excellent linearity Has a Collector-Emitter Voltage of -25 V Also has a Collector Current of -0.5 A It also has a Collector-Base Voltage of -40 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Capacitance of 5 pF Moreover, has a Transition Frequency is 150 MHz Last…
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- Transistors
S9013 NPN Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9013 include; It has an Excellent linearity Has a Collector-Emitter Voltage of 25 V Also has a Collector Current of 0.5A It also has a Collector-Base Voltage of 40 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Capacitance of 5 pF Moreover, has a Transition Frequency is 150 MHz Last but…
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- Transistors
S9015 PNP General Purpose Transistor
- KSh 10.00
- Features of S9015 include; It has an Excellent linearity Has a Collector-Emitter Voltage of -45 V Also has a Collector Current of -100 mA It also has a Collector-Base Voltage of -50 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Power Dissipation of 0.2 W Moreover, has a Transition Frequency is 150 MHz…
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- Transistors
S9018 NPN Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9018 include; Has a Collector-Emitter Voltage of 15 V Also has a Collector Current of 50 mA It also has a Collector-Base Voltage of 30 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Power Dissipation of 400 mW Moreover, has a Transition Frequency is 600 MHz Last but not least, has…
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