IRF630 N-Channel Power MOSFET

Description

IRF630 is designed for applications that require high-speed switching. It can sustain load voltage up to 200 V and 9 A current, and drive current up to 36 A in pulse mode for 300 μs with a duty cycle of 2%. This Power MOSFET is specially designed to minimize input capacitance and gate change and is available in package TO-220.

Features include;

• Drain to source voltage (Vds) is 200V.
• Gate to source voltage of ±20V.
• Continuous drain current (Id) is 9A.
• Power dissipation (Pd) is 75W.
• Operating junction temperature range from -65°C to 150°C.
• Gate threshold voltage of 3V.
•  ’Trench’ technology
•  Low on-state resistance
• Fast switching
•  Low thermal resistance

Applications of IRF630;

The IRF630 MOSFET is suitable for a wide variety of applications, including: DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications.

Specifications;

• Channel Type: N Channel
• Drain Source Voltage Vds: 200V
• Continuous Drain Current Id: 9A
• Drain Source On State Resistance: 0.4ohm
• Transistor Case Style: TO-220
• Transistor Mounting: Through Hole
• Rds(on) Test Voltage: 10V

Datasheet

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