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- mosfet
IRF510 N Channel Power MOSFET
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Drain-to-source voltage VDS: 100V Drain-to-source current ID: 5.6A On-state resistance (drain-to-source resistance) RDS: 0.54Ω Operating temperature range: -55˚C to 175˚C Gate charge Qg: 8.3nC Gate-source voltage VGS: ±20V Maximum power dissipation: 43W Maximum voltage required to conduct: 2V to 4V Package type: TO-220AB
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IRF630 N-Channel Power MOSFET
- KSh 100.00
- Specifications; Channel Type: N Channel Drain Source Voltage Vds: 200V Continuous Drain Current Id: 9A Drain Source On State Resistance: 0.4ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V
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- Mosftets, Transistors
IRF730 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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IRF740 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package: TO-220. Drain-to-Source Breakdown Voltage: 400 V. Gate-to-Source Breakdown Voltage: +/- 20 V. Hole Diameter: 3.8mm (0.15in) Weight: 2g (0.07oz) Continuous Drain Current: 10 A (with adequate heat sinking, consider our TO-220 Heat Sink Set) Minimum Operating Temperature: -55°C. Maximum Operating Temperature: 150°C. Pin Spacing Pitch: 2.54mm (0.1in)
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- Mosftets, Transistors
IRF830 N-Channel Power MOSFET
- KSh 100.00
- Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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- Transistors
IRFZ44N Mosfet N-Channel Transistor
- KSh 100.00
- Features of IRFZ44N Mosfet N-Channel Transistor Small signal N-Channel MOSFET Continuous Drain Current (ID) is 49A at 25°C Pulsed Drain Current (ID-peak) is 160A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V (max) Maximum Drain-Source Voltage (VDS) is 55V Rise time and fall time is about 60ns and…
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