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- Mosfets, Mosftets, Transistors
Capacitive Soil Moisture Sensor v1.2
- KSh 300.00
- Features: ✔ Non-Corrosive Design – Uses capacitive sensing technology, eliminating rust and increasing lifespan.✔ High Sensitivity & Accuracy – Provides precise moisture readings for better plant care.✔ Analog Output – Easily integrates with Arduino, ESP32, Raspberry Pi, and other microcontrollers.✔ Wide Voltage Range – Operates from 3.3V to 5V, making it compatible with various boards.✔ Compact & Easy to Use…
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- Mosftets, Transistors
IRF530 N Channel Power MOSFET Transistor
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Maximum Drain-to-source voltage VDS: 100V Maximum continuous drain current ID: 14A Pulse drain current: 56A Maximum power dissipation: 88W Maximum gate-to-source voltage: ±20V Peak diode recovery dv/dt: 5.5V/ns On-state resistance: 0.16Ω Total gate charge Qg: 26nC Operating junction and storage temperature range: -55˚C to +175˚C Package: TO-220AB
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- Mosftets, Transistors
IRF730 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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- Mosftets, Transistors
IRF830 N-Channel Power MOSFET
- KSh 100.00
- Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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- Mosfets, Mosftets, Transistors
IRFZ24N N-Channel Power MOSFET – 55V, 17A
- KSh 100.00
- Features: ✔ N-Channel MOSFET – Low on-resistance for high efficiency.✔ High Current Capability – Supports up to 17A continuous drain current.✔ Fast Switching Speed – Ideal for high-speed switching applications.✔ Low Gate Drive Requirements – Compatible with microcontrollers and logic circuits.✔ Durable TO-220 Package – Provides excellent heat dissipation.
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- Mosftets, Transistors
IRFZ34N N-Channel Power MOSFET – 55V 30A
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 30A continuous drain current.✔ Low On-Resistance (Rds ON) – Only 0.035Ω, ensuring minimal power loss.✔ Fast Switching Speed – Ideal for high-frequency applications.✔ Wide Operating Voltage – Can handle up to 55V Vds.✔ TO-220 Package – Easy to mount and integrate into circuits.✔ High Efficiency & Low Heat Dissipation – Perfect…
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- Mosfets, Mosftets, Transistors
IRFZ46N Power MOSFET – N-Channel 55V 53A TO-220
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 53A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Ensures efficient power transfer with minimal heat dissipation.✔ Fast Switching Speed – Optimized for high-frequency applications.✔ Robust & Reliable – Withstands high power loads, ensuring long-term performance.✔ TO-220 Package – Easy to mount on heat sinks for better thermal dissipation.
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- Mosfets, Mosftets, Transistors
IRLZ24N Logic-Level MOSFET – 55V 17A N-Channel Power MOSFET
- KSh 100.00
- Features: ✔ Logic-Level Gate Drive – Fully turns on with a 5V logic signal.✔ High Current Capacity – Supports up to 17A continuous drain current.✔ Low RDS(on) (0.06Ω) – Reduces heat generation and improves efficiency.✔ Fast Switching Speed – Ideal for PWM, motor drivers, and power applications.✔ Robust Design – Operates at up to 55V Drain-Source Voltage (VDS).✔ TO-220 Package…
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- Mosfets, Mosftets, Transistors
IRLZ48N N-Channel MOSFET – 55V, 64A, Logic-Level
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 64A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Only 16mΩ, ensuring minimal power loss and heat dissipation.✔ Logic-Level Gate Drive – Can be directly driven by 5V logic (Arduino, Raspberry Pi, ESP32).✔ Fast Switching Speed – Ideal for high-frequency switching applications.✔ Robust and Durable – Designed for industrial, automotive, and DIY…
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- Transistors, Voltage regulators
LM7808C Voltage Regulator IC L7808(Three-terminal)
- KSh 50.00
- Specifications of L7808 Input Voltage Range: 10V to 35V. Output Voltage Tolerance: ±2% at 25°C. Maximum Output Current: 1.5A. Thermal Shutdown Temperature: Typically 150°C. Operating Temperature Range: 0°C to +125°C. Storage Temperature Range: -65°C to +150°C.
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- mosfet, Mosftets, Transistors
SL7H2BF P-Channel Power MOSFET
- KSh 50.00
- Specifications of SL7H2BF Drain-Source Voltage (Vds): Up to 100V. Continuous Drain Current (Id): Ranges from 20A to 100A. Gate Threshold Voltage (Vgs(th)): Usually between 2V and 4V. Total Gate Charge (Qg): Low, facilitating high-speed switching. Operating Temperature Range: From -55°C to +175°C.
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- Transistor, Transistors
TIP120 NPN Medium-power Darlington Transistor
- KSh 50.00
- Key Features: ✔ High-power NPN Darlington transistor for switching applications ✔ Collector-Emitter Voltage (Vce): 60V ✔ Continuous Collector Current (Ic): 5A ✔ Peak Collector Current (Icm): 8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): 2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for improved heat dissipation ✔ Ideal for motor control and power…
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- Transistors
TIP122 NPN Power Transistor
- KSh 100.00
- Features: ✔ NPN Darlington transistor for high current applications ✔ Collector-Emitter Voltage (Vce): 100V ✔ Continuous Collector Current (Ic): 5A ✔ Peak Collector Current (Icm): 8A ✔ High DC Current Gain (hFE): 1000 (min) ✔ Low Saturation Voltage (Vce(sat)): 2V ✔ Power Dissipation (Ptot): 65W ✔ Package Type: TO-220 ✔ Ideal for: Motor control, switching regulators, and power amplification
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- Transistor, Transistors
TIP125 PNP Power Transistor
- KSh 100.00
- Key Features: ✔ High-power PNP Darlington transistor ✔ Collector-Emitter Voltage (Vce): -60V ✔ Continuous Collector Current (Ic): -5A ✔ Peak Collector Current (Icm): -8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): -2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for excellent heat dissipation ✔ Perfect for power switching and motor control applications
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- Transistors
TIP127 PNP Power Transistor
- KSh 100.00
- Key Features: ✔ High power PNP Darlington transistor ✔ Collector-Emitter Voltage (Vce): -100V ✔ Continuous Collector Current (Ic): -5A ✔ Peak Collector Current (Icm): -8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): -2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for efficient heat dissipation ✔ Compatible with microcontrollers due to high gain
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- Transistors
TIP142T Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP142T Transistor Type: NPN Maximum Continuous Collector Current: 10 A Maximum Collector Emitter Voltage: 100 V Maximum Emitter Base Voltage: 5 V Package Type: TO-220 Mounting Type: Through Hole Pin Count: 3 Transistor Configuration: Single Number of Elements per Chip: 1 Minimum DC Current Gain: 500 Maximum Collector Base Voltage: 100 V Maximum Collector Emitter Saturation Voltage: 3…
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- Transistors
TIP42C Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP42C Transistor Polarity: PNP Collector Emitter Voltage Max: 100V Continuous Collector Current: 6A Power Dissipation: 65W Transistor Case Style: TO-220 Transistor Mounting: Through Hole
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- Electronic components, Transistors
2N2222 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- 2N2222 Bipolar Junction Transistor is a common NPN used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speeds.
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- Transistors
2N2369 NPN High Speed Switching Transistor
- KSh 50.00
- Features of 2N2369 include; Has a Collector-Emitter Voltage of 15 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 40 V Has an Emitter-Base Voltage of 4 V To add on that, has a Collector Power Dissipation of 0.36 W Moreover, has a Transition Frequency is 500 MHz Last but not least, has…
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- Electronic components, Transistors
2N2907 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- 2N2907 Bipolar Junction Transistor is a commonly available PNP used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speed.
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- Electronic components, Transistors
2N3904 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- 2N3904 Bipolar Junction Transistor is a common NPN used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speeds.
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- Electronic components, Transistors
2N3906 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- 2N3906 Bipolar Junction Transistor is a commonly available PNP used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speed.
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- Transistors
2N5401 PNP High Voltage Transistor
- KSh 10.00
- Features of 2N5401 includes; It has a High collector breakdown voltage Has a DC Current Gain of up to 100 It has an Operating temperature range of -55ºC to +150ºC Collector-Emitter Voltage of 150 V Also has a Collector Current of 0.6 A It also has a Collector-Base Voltage of 160 V Emitter-Base Voltage of 5V Collector Dissipation - 0.31…
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- Electronic components, Transistors
A1015 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- Bipolar Junction Transistor (BJT) PNP
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- Transistors
A733 PNP Epitaxial Silicon Transistor
- KSh 10.00
- Features of A733 include; It has a DC Current Gain of 90 to 600 Has a Collector-Emitter Voltage of -50 V Also it has a Collector Current of -100 mA It also has a Collector-Base Voltage of -60 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Power Dissipation of 250 mW Moreover, it…
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- Transistors
BC109 Low Power Bipolar Transistor
- KSh 50.00
- Features of BC109 include; Has a Collector-Emitter Voltage of 25 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 30 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Power Dissipation of 0.3 W Moreover, has a Transition Frequency is 150 MHz Last but not least, has…
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- Electronic components, Transistors
BC327 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- BC327 Bipolar Junction Transistor has a PNP polarity. It has a 5V Emitter Voltage, 48 volts, 0.8 A as the collector power, and a saturation voltage of 0.7V. In addition, it has a maximum power dissipation of 1500mW and an operating temperature range from -55C to 150C. It is a Pb-free device.
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- Electronic components, Transistors
BC337 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- BC337 is a general purpose NPN transistor. It has a maximum gain of 630. BC337 is commonly used in low power audio applications. It can also be used to switch loads of upto 45 V and 800 mA.
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- Transistors
BC547 NPN General Purpose Transistor
- KSh 10.00
- BC547 Transistor Features It is a Bi-Polar NPN Transistor Has a DC Current Gain of 800 maximum Its Continuous Collector current is 100mA Has an Emitter Base Voltage of 6V Maximum Base Current of 5 mA Lastly, available in To-92 Package
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- Transistors
BC548 NPN Bi-polar Junction Transistor
- KSh 10.00
- 74HC273 is an octal positive-edge triggered D-type flip-flop. The device has clock (CP) and master reset (MR) inputs.A LOW on MR forces the outputs LOW independently of clock and data inputs.
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- Transistors
BC557 General Purpose PNP Transistor
- KSh 10.00
- Features of BC557 It is a Bi-Polar PNP Transistor Has a DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100 mA The Emitter Base Voltage (VBE) of 6 V In addition, it has a maximum base Current (IB) of 5 mA Lastly, it is available in To-92 Package
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- Electronic components, Transistors
C1815 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- C1815 Bipolar Junction Transistor is made for audio frequency amplification and high frequency OSC. It has a good collector power dissipation and DC current gain values. Therefore, it is ideal to use in audio amplification. It is also best for electronic signal amplification purposes.
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- Transistors
C2655 NPN Silicon Epitaxial Transistor
- KSh 10.00
- Features of C2655 include; It has a low saturation voltage of 0.5 V Has a Collector-Emitter Voltage of 50 V Also has a Collector Current of 2A It also has a Collector-Base Voltage of 50 V Has an Emitter-Base Voltage of 5V To add on that, has a high Collector Power Dissipation of 900 mW Moreover, has a Transition Frequency…
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- Transistors
C945 Bipolar NPN Amplifier Transistor
- KSh 10.00
- Features of C945 include; It is a Japanese High frequency amplifier NPN Transistor Has a Current Gain (hFE) of 70 to 700 (high linearity) Also has a Collector Current of 150 mA Collector-Emitter Voltage of 50 V It also has a Collector-Base Voltage of 60V Emitter-Base Voltage of 5V Transition Frequency is 150 MHz Available only in To-92 Package
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- mosfet, Mosftets, Transistors
FQP27P06 60V P- Channel MOSFET
- KSh 100.00
- Features of FQP27P06 Has -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V It has a low gate charge ( typical 33 nC) Also has a Low Crss ( typical 120 pF) Moreover, its Fast switching In addition 100% avalanche tested Improved dv/dt capability Lastly has 175°C maximum junction temperature rating
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- Mosftets, Transistors
IRF520N N-Channel Power MOSFET
- KSh 100.00
- Features of IRF520N It is an N-Channel Power MOSFET It has a Continuous Drain Current (ID) of 9.2A Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms Gate threshold voltage (VGS-th) is 4V (max) Rise time and fall time is 30nS and 20nS It is commonly used with Arduino, due to…
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- mosfet, Transistors, Uncategorized
IRF540N N-Channel Power MOSFET
- KSh 100.00
- Features of IRF540N It is a small signal N-Channel MOSFET It has a Continuous Drain Current of 33A at 25°C Pulsed Drain Current is 110A Minimum Gate threshold voltage of 2V Gate Source Voltage of ±20V Maximum Drain Source Voltage of 100V Both Turn ON and Turn off time is 35ns It is commonly used with Arduino, due to its low threshold current. Available…
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- mosfet, Mosftets, Transistors
IRF640N N-Channel Power MOSFETS
- KSh 100.00
- Features of IRF640N Has a Dynamic dV/dt Rating Also has a Repetitive Avalanche Rated It has a Logic Level Gate Drive In addition has Simple drive requirements Moreover, has a 175 °C Operating Temperature Has a Fast Switching Lastly, Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRF8010 N Channel MOSFET Transistor
- KSh 200.00
- Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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- Transistors
IRFZ44N Mosfet N-Channel Transistor
- KSh 100.00
- Features of IRFZ44N Mosfet N-Channel Transistor Small signal N-Channel MOSFET Continuous Drain Current (ID) is 49A at 25°C Pulsed Drain Current (ID-peak) is 160A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V (max) Maximum Drain-Source Voltage (VDS) is 55V Rise time and fall time is about 60ns and…
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- mosfet, Mosftets, Transistors
IRL520N N-Channel MOSFET Transistor
- KSh 100.00
- Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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- mosfet, Mosftets, Transistors
IRL540N N Channel MOSFET Transistor
- KSh 100.00
- Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRLZ44N N Channel Power Mosfet Transistor
- KSh 100.00
- Features of IRLZ44N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- Transistors, Voltage regulators
LM7812C voltage regulator IC L7812 (Three terminal)
- KSh 100.00
- LM7812 voltage regulator is three terminal positive regulator. It is useful in a wide range of applications because of its fixed voltage output. It employs internal current limiting, thermal shut down and safe operating area. If adequate heat sinking is provided, it can deliver over 1A output current.
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- Transistors
MPSA42 high voltage NPN Transistor
- KSh 20.00
- Features of MPSA42 High Voltage NPN Transistor DC Current Gain of 40 Continuous Collector current is 500 mA Base- Emitter Voltage of 6V Collector-Emitter Voltage of 300 V Collector-Base Voltage of 300 V Available in To-92 Package
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- Transistors
MPSA92 High Voltage PNP Transistor
- KSh 20.00
- Features of MPSA92 include; It is a High Voltage PNP Transistor Has a Collector Emitter voltage (VCE) of 300 V Collector Base voltage (VCB) is 300 V It has an Emitter Base Voltage (VBE) of 5 V In addition its Continuous Collector current (IC) is 500 mA DC Current Gain (hFE), typically 40 when IC = 10 mA Last but…
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- mosfet, Mosftets, Transistors
NDP6020P P-Channel Mosfet Transistor
- KSh 100.00
- Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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- Electronic components, Transistors
S8050 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- Bipolar Junction Transistor (BJT) NPN
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- Electronic components, Transistors
S8550 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- Bipolar Junction Transistor (BJT) PNP
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- Transistors
S9012 PNP Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9012 include; It has an Excellent linearity Has a Collector-Emitter Voltage of -25 V Also has a Collector Current of -0.5 A It also has a Collector-Base Voltage of -40 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Capacitance of 5 pF Moreover, has a Transition Frequency is 150 MHz Last…
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- Transistors
S9013 NPN Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9013 include; It has an Excellent linearity Has a Collector-Emitter Voltage of 25 V Also has a Collector Current of 0.5A It also has a Collector-Base Voltage of 40 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Capacitance of 5 pF Moreover, has a Transition Frequency is 150 MHz Last but…
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- Transistors
S9014 NPN General Purpose Transistors
- KSh 10.00
- Features of S9014 includes; Pre-Amplifier, Low Level, Low Noise NPN Transistor It has a Current Gain (hFE) of 60 to 1000 (good linearity) Has a Continuous Collector current of 100mA Has a Collector-Emitter Voltage of 45 V It also has a Collector-Base Voltage of 50V Has an Emitter-Base Voltage of 5 V Moreover, has a Transition Frequency is 150 MHz…
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- Transistors
S9015 PNP General Purpose Transistor
- KSh 10.00
- Features of S9015 include; It has an Excellent linearity Has a Collector-Emitter Voltage of -45 V Also has a Collector Current of -100 mA It also has a Collector-Base Voltage of -50 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Power Dissipation of 0.2 W Moreover, has a Transition Frequency is 150 MHz…
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- Transistors
S9018 NPN Epitaxial Silicon Transistor
- KSh 10.00
- Features of S9018 include; Has a Collector-Emitter Voltage of 15 V Also has a Collector Current of 50 mA It also has a Collector-Base Voltage of 30 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Power Dissipation of 400 mW Moreover, has a Transition Frequency is 600 MHz Last but not least, has…
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- Transistors
SVF4N65F TO-220F 650V 4A MOSFET
- KSh 50.00
- 1000uF Radial Electrolytic Capacitor has polarity. That is, it has both a positive and negative pin. The long pin is the positive while the short pin is the negative. Polarity can also be identified using the negative strip on the capacitor label. The negative pin will be directly under the negative symbol.
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- Mosftets
TC4420CPA 6A High Speed Mosfet Driver
- KSh 100.00
- Features of TC4420CPA Logic Input Will Withstand Negative Swing Up To 5V Matched Rise and Fall Times: - 25 ns (2500 pF load) High Peak Output Current of 6A Wide Input Supply Voltage Range: - 4.5V to 18V High Capacitive Load Drive Capability: 10,000 pF Short Delay Time: 55 ns (typ.) Low Supply Current With Logic ‘1’ Input: - 450…
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- Mosftets
TC4424 3A Dual High Speed Power Mosfet Driver
- KSh 200.00
- Features of TC4424 High Peak Output Current of 3A Wide Operating Range of 4.5V to 18V High Capacitive Load Drive Capability of 1800 pF in 25nsec Short Delay Times of 40nsec Typ Matched Rise/Fall Times Low Supply Current — With Logic "1" Input - 3.5 mA — With Logic "0" Input -350 µA Low Output Impedance of 3.5Ω Typ Also…
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- Transistors
TIP31C Silicon NPN Power Transistor
- KSh 100.00
- Features and Specifications of TIP31C It is a Medium power transistor It has a hfe gain of up to 50 and hfe improved linearity Has a Maximum voltage across collector and emitter of 100V Collector allows a maximum current of 3A DC through Across base and emitter Maximum voltage of 5 V Maximum current allowed through the transistor base is 1A…
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- Transistors
TIP32C – PNP Epitaxial Silicon Transistor
- KSh 100.00
- Features of TIP32C include; It is a Medium power PNP Transistor Has a DC Current Gain (hFE) of 10 to 50 It's Continuous Collector current (IC) is 3A Collector Emitter voltage (VCE) is 100 V Also has a Collector Base voltage (VCB) is 100V Emitter Base Voltage (VBE) is 5V Lastly, Available in To-220 Package
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