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- Mosfets, Mosftets, Transistors
Capacitive Soil Moisture Sensor v1.2
- KSh 300.00
- Features: ✔ Non-Corrosive Design – Uses capacitive sensing technology, eliminating rust and increasing lifespan.✔ High Sensitivity & Accuracy – Provides precise moisture readings for better plant care.✔ Analog Output – Easily integrates with Arduino, ESP32, Raspberry Pi, and other microcontrollers.✔ Wide Voltage Range – Operates from 3.3V to 5V, making it compatible with various boards.✔ Compact & Easy to Use…
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- Mosftets, Transistors
IRF530 N Channel Power MOSFET Transistor
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Maximum Drain-to-source voltage VDS: 100V Maximum continuous drain current ID: 14A Pulse drain current: 56A Maximum power dissipation: 88W Maximum gate-to-source voltage: ±20V Peak diode recovery dv/dt: 5.5V/ns On-state resistance: 0.16Ω Total gate charge Qg: 26nC Operating junction and storage temperature range: -55˚C to +175˚C Package: TO-220AB
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- Mosftets, Transistors
IRF730 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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- Mosftets, Transistors
IRF830 N-Channel Power MOSFET
- KSh 100.00
- Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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- Mosfets, Mosftets, Transistors
IRFZ24N N-Channel Power MOSFET – 55V, 17A
- KSh 100.00
- Features: ✔ N-Channel MOSFET – Low on-resistance for high efficiency.✔ High Current Capability – Supports up to 17A continuous drain current.✔ Fast Switching Speed – Ideal for high-speed switching applications.✔ Low Gate Drive Requirements – Compatible with microcontrollers and logic circuits.✔ Durable TO-220 Package – Provides excellent heat dissipation.
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- Mosftets, Transistors
IRFZ34N N-Channel Power MOSFET – 55V 30A
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 30A continuous drain current.✔ Low On-Resistance (Rds ON) – Only 0.035Ω, ensuring minimal power loss.✔ Fast Switching Speed – Ideal for high-frequency applications.✔ Wide Operating Voltage – Can handle up to 55V Vds.✔ TO-220 Package – Easy to mount and integrate into circuits.✔ High Efficiency & Low Heat Dissipation – Perfect…
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- Mosfets, Mosftets, Transistors
IRFZ46N Power MOSFET – N-Channel 55V 53A TO-220
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 53A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Ensures efficient power transfer with minimal heat dissipation.✔ Fast Switching Speed – Optimized for high-frequency applications.✔ Robust & Reliable – Withstands high power loads, ensuring long-term performance.✔ TO-220 Package – Easy to mount on heat sinks for better thermal dissipation.
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- Mosfets, Mosftets, Transistors
IRLZ24N Logic-Level MOSFET – 55V 17A N-Channel Power MOSFET
- KSh 100.00
- Features: ✔ Logic-Level Gate Drive – Fully turns on with a 5V logic signal.✔ High Current Capacity – Supports up to 17A continuous drain current.✔ Low RDS(on) (0.06Ω) – Reduces heat generation and improves efficiency.✔ Fast Switching Speed – Ideal for PWM, motor drivers, and power applications.✔ Robust Design – Operates at up to 55V Drain-Source Voltage (VDS).✔ TO-220 Package…
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- Mosfets, Mosftets, Transistors
IRLZ48N N-Channel MOSFET – 55V, 64A, Logic-Level
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 64A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Only 16mΩ, ensuring minimal power loss and heat dissipation.✔ Logic-Level Gate Drive – Can be directly driven by 5V logic (Arduino, Raspberry Pi, ESP32).✔ Fast Switching Speed – Ideal for high-frequency switching applications.✔ Robust and Durable – Designed for industrial, automotive, and DIY…
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- Transistors, Voltage regulators
LM7808C Voltage Regulator IC L7808(Three-terminal)
- KSh 50.00
- Specifications of L7808 Input Voltage Range: 10V to 35V. Output Voltage Tolerance: ±2% at 25°C. Maximum Output Current: 1.5A. Thermal Shutdown Temperature: Typically 150°C. Operating Temperature Range: 0°C to +125°C. Storage Temperature Range: -65°C to +150°C.
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- mosfet, Mosftets, Transistors
SL7H2BF P-Channel Power MOSFET
- KSh 50.00
- Specifications of SL7H2BF Drain-Source Voltage (Vds): Up to 100V. Continuous Drain Current (Id): Ranges from 20A to 100A. Gate Threshold Voltage (Vgs(th)): Usually between 2V and 4V. Total Gate Charge (Qg): Low, facilitating high-speed switching. Operating Temperature Range: From -55°C to +175°C.
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- Transistor, Transistors
TIP120 NPN Medium-power Darlington Transistor
- KSh 50.00
- Key Features: ✔ High-power NPN Darlington transistor for switching applications ✔ Collector-Emitter Voltage (Vce): 60V ✔ Continuous Collector Current (Ic): 5A ✔ Peak Collector Current (Icm): 8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): 2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for improved heat dissipation ✔ Ideal for motor control and power…
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- Transistors
TIP122 NPN Power Transistor
- KSh 100.00
- Features: ✔ NPN Darlington transistor for high current applications ✔ Collector-Emitter Voltage (Vce): 100V ✔ Continuous Collector Current (Ic): 5A ✔ Peak Collector Current (Icm): 8A ✔ High DC Current Gain (hFE): 1000 (min) ✔ Low Saturation Voltage (Vce(sat)): 2V ✔ Power Dissipation (Ptot): 65W ✔ Package Type: TO-220 ✔ Ideal for: Motor control, switching regulators, and power amplification
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- Transistor, Transistors
TIP125 PNP Power Transistor
- KSh 100.00
- Key Features: ✔ High-power PNP Darlington transistor ✔ Collector-Emitter Voltage (Vce): -60V ✔ Continuous Collector Current (Ic): -5A ✔ Peak Collector Current (Icm): -8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): -2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for excellent heat dissipation ✔ Perfect for power switching and motor control applications
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- Transistors
TIP127 PNP Power Transistor
- KSh 100.00
- Key Features: ✔ High power PNP Darlington transistor ✔ Collector-Emitter Voltage (Vce): -100V ✔ Continuous Collector Current (Ic): -5A ✔ Peak Collector Current (Icm): -8A ✔ High DC Current Gain (hFE): 1000 (minimum) ✔ Low Saturation Voltage (Vce(sat)): -2V ✔ Power Dissipation (Ptot): 65W ✔ TO-220 package for efficient heat dissipation ✔ Compatible with microcontrollers due to high gain
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- Transistors
TIP142T Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP142T Transistor Type: NPN Maximum Continuous Collector Current: 10 A Maximum Collector Emitter Voltage: 100 V Maximum Emitter Base Voltage: 5 V Package Type: TO-220 Mounting Type: Through Hole Pin Count: 3 Transistor Configuration: Single Number of Elements per Chip: 1 Minimum DC Current Gain: 500 Maximum Collector Base Voltage: 100 V Maximum Collector Emitter Saturation Voltage: 3…
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- Transistors
TIP42C Silicon NPN Power Transistor
- KSh 100.00
- Specifications of TIP42C Transistor Polarity: PNP Collector Emitter Voltage Max: 100V Continuous Collector Current: 6A Power Dissipation: 65W Transistor Case Style: TO-220 Transistor Mounting: Through Hole
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- Electronic components, Transistors
2N2222 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- 2N2222 Bipolar Junction Transistor is a common NPN used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speeds.
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- Transistors
2N2369 NPN High Speed Switching Transistor
- KSh 50.00
- Features of 2N2369 include; Has a Collector-Emitter Voltage of 15 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 40 V Has an Emitter-Base Voltage of 4 V To add on that, has a Collector Power Dissipation of 0.36 W Moreover, has a Transition Frequency is 500 MHz Last but not least, has…
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- Electronic components, Transistors
2N2907 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- 2N2907 Bipolar Junction Transistor is a commonly available PNP used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speed.
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- Electronic components, Transistors
2N3904 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- 2N3904 Bipolar Junction Transistor is a common NPN used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speeds.
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- Electronic components, Transistors
2N3906 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- 2N3906 Bipolar Junction Transistor is a commonly available PNP used for general purpose low-power amplifying applications. It uses low to medium current and also low power. In addition, it uses medium voltage, and can operate at moderately high speed.
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- Transistors
2N5401 PNP High Voltage Transistor
- KSh 10.00
- Features of 2N5401 includes; It has a High collector breakdown voltage Has a DC Current Gain of up to 100 It has an Operating temperature range of -55ºC to +150ºC Collector-Emitter Voltage of 150 V Also has a Collector Current of 0.6 A It also has a Collector-Base Voltage of 160 V Emitter-Base Voltage of 5V Collector Dissipation - 0.31…
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- Electronic components, Transistors
A1015 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- Bipolar Junction Transistor (BJT) PNP
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