NDP6020P P-Channel Mosfet Transistor

Description

NDP6020P is a P channel logic level enhancement mode Field Effect Transistor. It uses high cell density DMOS technology. This very high density process has been tailored to minimize on state resistance. It also provides superior switching performance. Also withstands high energy pulses in the avalanche and commutation modes. The mosfet is mostly suited for low voltage applications. such as DC/DC converters, PWM motor controls and other battery powered circuits. where fast switching, low in line power loss and resistance to transients are needed.

Features of NDP6020P 

• It is Critical DC electrical parameters specified at elevated temperature.
• Has an Internal source drain diode that eliminates need for an external Zener diode suppressor
• To add on that, has 175°C maximum junction temperature rating.
• Also has a high density cell design for extremely low RDS(ON).

Specifications;

• Type Designator: NDP6020P
• Transistor type: MOSFET
• Type of Control Channel: P -Channel
• Has a Maximum Power Dissipation (Pd) of 60 W
• Drain Source Maximum Voltage |Vds| of 20 V
• It has a Maximum Gate Source Voltage |Vgs|of 8 V
• Also has a Maximum Gate Threshold Voltage |Vgs(th)|of 1 V
• Maximum Drain Current |Id| of 24 A
• Also has a Total Gate Charge (Qg) of 35 nC
• Last but least has a Maximum Drain Source On State Resistance (Rds) of 0.05 Ohm

Datasheet