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C2655 NPN Silicon Epitaxial Transistor
KSh 10.00
Features of C2655 include;
- It has a low saturation voltage of 0.5 V
- Has a Collector-Emitter Voltage of 50 V
- Also has a Collector Current of 2A
- It also has a Collector-Base Voltage of 50 V
- Has an Emitter-Base Voltage of 5V
- To add on that, has a high Collector Power Dissipation of 900 mW
- Moreover, has a Transition Frequency is 100 MHz
- Last but not least, has a Max. Operating Junction Temperature of 150 °C
- Lastly, has a Collector Capacitance of 35 pF
Description
C2655 is a NPN Epitaxial Transistor. It has a collector current of 2A. Additionally, it is complimentary to 2SA1020. It is Mostly used Power Amplifier and Power Switching Applications
Features of C2655 include;
- It has a low saturation voltage of 0.5 V
- Has a Collector-Emitter Voltage of 50 V
- Also has a Collector Current of 2A
- It also has a Collector-Base Voltage of 50 V
- Has an Emitter-Base Voltage of 5V
- To add on that, has a high Collector Power Dissipation of 900 mW
- Moreover, has a Transition Frequency is 100 MHz
- Last but not least, has a Max. Operating Junction Temperature of 150 °C
- Lastly, has a Collector Capacitance of 35 pF
Applications:
- Power Amplifier Applications
- Power Switching Applications
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