power mosfet

  • IRF740 N Channel Power MOSFET Quick View
    • IRF740 N Channel Power MOSFET Quick View

    • IRF740 N Channel Power MOSFET

    • KSh 100.00
    • Specifications; Package: TO-220. Drain-to-Source Breakdown Voltage: 400 V. Gate-to-Source Breakdown Voltage: +/- 20 V. Hole Diameter: 3.8mm (0.15in) Weight: 2g (0.07oz) Continuous Drain Current: 10 A (with adequate heat sinking, consider our TO-220 Heat Sink Set) Minimum Operating Temperature: -55°C. Maximum Operating Temperature: 150°C. Pin Spacing Pitch: 2.54mm (0.1in)
    • Add to cart
  • IRF520N N-Channel Power MOSFETIRF520N N-Channel Power MOSFET Quick View
    • IRF520N N-Channel Power MOSFETIRF520N N-Channel Power MOSFET Quick View
    • ,

    • IRF520N N-Channel Power MOSFET

    • KSh 100.00
    • Features of IRF520N It is an N-Channel Power MOSFET It has a Continuous Drain Current (ID) of 9.2A Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms Gate threshold voltage (VGS-th) is 4V (max) Rise time and fall time is 30nS and 20nS  It is commonly used with Arduino, due to…
    • Add to cart
  • IRF540N N-Channel Power MOSFETIRF540N N-Channel Power MOSFET Quick View
    • IRF540N N-Channel Power MOSFETIRF540N N-Channel Power MOSFET Quick View
    • , ,

    • IRF540N N-Channel Power MOSFET

    • KSh 100.00
    • Features of IRF540N  It is a small signal N-Channel MOSFET It has a Continuous Drain Current of 33A at 25°C Pulsed Drain Current is 110A Minimum Gate threshold voltage of 2V Gate Source Voltage of ±20V Maximum Drain Source Voltage of 100V Both Turn ON and Turn off time is 35ns It is commonly used with Arduino, due to its low threshold current. Available…
    • Add to cart