IRF8010

  • IRF8010 N Channel MOSFET TransistorIRF8010 N Channel MOSFET Transistor Quick View
    • IRF8010 N Channel MOSFET TransistorIRF8010 N Channel MOSFET Transistor Quick View
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    • IRF8010 N Channel MOSFET Transistor

    • KSh 200.00
    • Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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