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IRF630 N-Channel Power MOSFET
- KSh 100.00
- Specifications; Channel Type: N Channel Drain Source Voltage Vds: 200V Continuous Drain Current Id: 9A Drain Source On State Resistance: 0.4ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V
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IRF740 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package: TO-220. Drain-to-Source Breakdown Voltage: 400 V. Gate-to-Source Breakdown Voltage: +/- 20 V. Hole Diameter: 3.8mm (0.15in) Weight: 2g (0.07oz) Continuous Drain Current: 10 A (with adequate heat sinking, consider our TO-220 Heat Sink Set) Minimum Operating Temperature: -55°C. Maximum Operating Temperature: 150°C. Pin Spacing Pitch: 2.54mm (0.1in)
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IRFZ48N N-Channel Power MOSFET – 55V, 64A
- KSh 100.00
- Features: ✔ High Current Handling – Supports up to 64A continuous drain current.✔ Low On-Resistance (RDS(on)) – Minimizes power loss and heat dissipation.✔ Fast Switching Speed – Enhances efficiency in high-frequency applications.✔ Robust Design – Capable of handling high power loads with low heat generation.✔ TO-220 Package – Easy to mount on heatsinks for better thermal management.
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LM358P Industry-Standard Dual Operational Amplifiers
- KSh 50.00
- LM358P circuits consists of two independent, high gain, internally frequency compensated operational amplifiers. They are designed specifically to operate from a single power supply over a wide range of voltages. The low power supply drain is independent of the magnitude of the power supply voltage. In the linear mode the input common-mode voltage range includes ground and the output voltage can…
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