“IRF540N N-Channel Power MOSFET” has been added to your cart. View cart
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- Uncategorized, mosfet, Transistors
IRF540N N-Channel Power MOSFET
- KSh 100.00
- Features of IRF540N It is a small signal N-Channel MOSFET It has a Continuous Drain Current of 33A at 25°C Pulsed Drain Current is 110A Minimum Gate threshold voltage of 2V Gate Source Voltage of ±20V Maximum Drain Source Voltage of 100V Both Turn ON and Turn off time is 35ns It is commonly used with Arduino, due to its low threshold current. Available…
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- mosfet, Mosftets, Transistors
IRF640N N-Channel Power MOSFETS
- KSh 100.00
- Features of IRF640N Has a Dynamic dV/dt Rating Also has a Repetitive Avalanche Rated It has a Logic Level Gate Drive In addition has Simple drive requirements Moreover, has a 175 °C Operating Temperature Has a Fast Switching Lastly, Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRF8010 N Channel MOSFET Transistor
- KSh 200.00
- Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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- Transistors
IRFZ44N Mosfet N-Channel Transistor
- KSh 100.00
- Features of IRFZ44N Mosfet N-Channel Transistor Small signal N-Channel MOSFET Continuous Drain Current (ID) is 49A at 25°C Pulsed Drain Current (ID-peak) is 160A Minimum Gate threshold voltage (VGS-th) is 2V Maximum Gate threshold voltage (VGS-th) is 4V Gate-Source Voltage is (VGS) is ±20V (max) Maximum Drain-Source Voltage (VDS) is 55V Rise time and fall time is about 60ns and…
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- mosfet, Mosftets, Transistors
IRL520N N-Channel MOSFET Transistor
- KSh 100.00
- Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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- mosfet, Mosftets, Transistors
IRL540N N Channel MOSFET Transistor
- KSh 100.00
- Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRLZ44N N Channel Power Mosfet Transistor
- KSh 100.00
- Features of IRLZ44N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- Transistors, Voltage regulators
LM7812C voltage regulator IC L7812 (Three terminal)
- KSh 100.00
- LM7812 voltage regulator is three terminal positive regulator. It is useful in a wide range of applications because of its fixed voltage output. It employs internal current limiting, thermal shut down and safe operating area. If adequate heat sinking is provided, it can deliver over 1A output current.
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- Transistors
MPSA42 high voltage NPN Transistor
- KSh 20.00
- Features of MPSA42 High Voltage NPN Transistor DC Current Gain of 40 Continuous Collector current is 500 mA Base- Emitter Voltage of 6V Collector-Emitter Voltage of 300 V Collector-Base Voltage of 300 V Available in To-92 Package
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- Transistors
MPSA92 High Voltage PNP Transistor
- KSh 20.00
- Features of MPSA92 include; It is a High Voltage PNP Transistor Has a Collector Emitter voltage (VCE) of 300 V Collector Base voltage (VCB) is 300 V It has an Emitter Base Voltage (VBE) of 5 V In addition its Continuous Collector current (IC) is 500 mA DC Current Gain (hFE), typically 40 when IC = 10 mA Last but…
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- mosfet, Mosftets, Transistors
NDP6020P P-Channel Mosfet Transistor
- KSh 100.00
- Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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- Electronic components, Transistors
S8050 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- Bipolar Junction Transistor (BJT) NPN
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