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- Transistors
A733 PNP Epitaxial Silicon Transistor
- KSh 10.00
- Features of A733 include; It has a DC Current Gain of 90 to 600 Has a Collector-Emitter Voltage of -50 V Also it has a Collector Current of -100 mA It also has a Collector-Base Voltage of -60 V Has an Emitter-Base Voltage of -5 V To add on that, has a Collector Power Dissipation of 250 mW Moreover, it…
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- Transistors
BC109 Low Power Bipolar Transistor
- KSh 50.00
- Features of BC109 include; Has a Collector-Emitter Voltage of 25 V Also has a Collector Current of 0.2 A It also has a Collector-Base Voltage of 30 V Has an Emitter-Base Voltage of 5 V To add on that, has a Collector Power Dissipation of 0.3 W Moreover, has a Transition Frequency is 150 MHz Last but not least, has…
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- Electronic components, Transistors
BC327 Bipolar Junction Transistor (BJT) PNP
- KSh 10.00
- BC327 Bipolar Junction Transistor has a PNP polarity. It has a 5V Emitter Voltage, 48 volts, 0.8 A as the collector power, and a saturation voltage of 0.7V. In addition, it has a maximum power dissipation of 1500mW and an operating temperature range from -55C to 150C. It is a Pb-free device.
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- Electronic components, Transistors
BC337 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- BC337 is a general purpose NPN transistor. It has a maximum gain of 630. BC337 is commonly used in low power audio applications. It can also be used to switch loads of upto 45 V and 800 mA.
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- Transistors
BC547 NPN General Purpose Transistor
- KSh 10.00
- BC547 Transistor Features It is a Bi-Polar NPN Transistor Has a DC Current Gain of 800 maximum Its Continuous Collector current is 100mA Has an Emitter Base Voltage of 6V Maximum Base Current of 5 mA Lastly, available in To-92 Package
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- Transistors
BC548 NPN Bi-polar Junction Transistor
- KSh 10.00
- 74HC273 is an octal positive-edge triggered D-type flip-flop. The device has clock (CP) and master reset (MR) inputs.A LOW on MR forces the outputs LOW independently of clock and data inputs.
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- Transistors
BC557 General Purpose PNP Transistor
- KSh 10.00
- Features of BC557 It is a Bi-Polar PNP Transistor Has a DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 100 mA The Emitter Base Voltage (VBE) of 6 V In addition, it has a maximum base Current (IB) of 5 mA Lastly, it is available in To-92 Package
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- Electronic components, Transistors
C1815 Bipolar Junction Transistor (BJT) NPN
- KSh 10.00
- C1815 Bipolar Junction Transistor is made for audio frequency amplification and high frequency OSC. It has a good collector power dissipation and DC current gain values. Therefore, it is ideal to use in audio amplification. It is also best for electronic signal amplification purposes.
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- Transistors
C2655 NPN Silicon Epitaxial Transistor
- KSh 10.00
- Features of C2655 include; It has a low saturation voltage of 0.5 V Has a Collector-Emitter Voltage of 50 V Also has a Collector Current of 2A It also has a Collector-Base Voltage of 50 V Has an Emitter-Base Voltage of 5V To add on that, has a high Collector Power Dissipation of 900 mW Moreover, has a Transition Frequency…
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- Transistors
C945 Bipolar NPN Amplifier Transistor
- KSh 10.00
- Features of C945 include; It is a Japanese High frequency amplifier NPN Transistor Has a Current Gain (hFE) of 70 to 700 (high linearity) Also has a Collector Current of 150 mA Collector-Emitter Voltage of 50 V It also has a Collector-Base Voltage of 60V Emitter-Base Voltage of 5V Transition Frequency is 150 MHz Available only in To-92 Package
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- mosfet, Mosftets, Transistors
FQP27P06 60V P- Channel MOSFET
- KSh 100.00
- Features of FQP27P06 Has -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V It has a low gate charge ( typical 33 nC) Also has a Low Crss ( typical 120 pF) Moreover, its Fast switching In addition 100% avalanche tested Improved dv/dt capability Lastly has 175°C maximum junction temperature rating
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- Mosftets, Transistors
IRF520N N-Channel Power MOSFET
- KSh 100.00
- Features of IRF520N It is an N-Channel Power MOSFET It has a Continuous Drain Current (ID) of 9.2A Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms Gate threshold voltage (VGS-th) is 4V (max) Rise time and fall time is 30nS and 20nS It is commonly used with Arduino, due to…
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