“IRL520N N-Channel MOSFET Transistor” has been added to your cart. View cart
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- mosfet, Mosftets, Transistors
IRF640N N-Channel Power MOSFETS
- KSh 100.00
- Features of IRF640N Has a Dynamic dV/dt Rating Also has a Repetitive Avalanche Rated It has a Logic Level Gate Drive In addition has Simple drive requirements Moreover, has a 175 °C Operating Temperature Has a Fast Switching Lastly, Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRF8010 N Channel MOSFET Transistor
- KSh 200.00
- Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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- mosfet, Mosftets, Transistors
IRL520N N-Channel MOSFET Transistor
- KSh 100.00
- Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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- mosfet, Mosftets, Transistors
IRL540N N Channel MOSFET Transistor
- KSh 100.00
- Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRLZ44N N Channel Power Mosfet Transistor
- KSh 100.00
- Features of IRLZ44N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
NDP6020P P-Channel Mosfet Transistor
- KSh 100.00
- Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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- Mosftets
TC4420CPA 6A High Speed Mosfet Driver
- KSh 100.00
- Features of TC4420CPA Logic Input Will Withstand Negative Swing Up To 5V Matched Rise and Fall Times: - 25 ns (2500 pF load) High Peak Output Current of 6A Wide Input Supply Voltage Range: - 4.5V to 18V High Capacitive Load Drive Capability: 10,000 pF Short Delay Time: 55 ns (typ.) Low Supply Current With Logic ‘1’ Input: - 450…
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- Mosftets
TC4424 3A Dual High Speed Power Mosfet Driver
- KSh 200.00
- Features of TC4424 High Peak Output Current of 3A Wide Operating Range of 4.5V to 18V High Capacitive Load Drive Capability of 1800 pF in 25nsec Short Delay Times of 40nsec Typ Matched Rise/Fall Times Low Supply Current — With Logic "1" Input - 3.5 mA — With Logic "0" Input -350 µA Low Output Impedance of 3.5Ω Typ Also…
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