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Mosftets

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  • Capacitive Soil Moisture Sensor v1.2Capacitive Soil Moisture Sensor v1.2 Quick View
    • Capacitive Soil Moisture Sensor v1.2Capacitive Soil Moisture Sensor v1.2 Quick View
    • Mosfets, Mosftets, Transistors
    • Capacitive Soil Moisture Sensor v1.2

    • KSh 300.00
    • Features: ✔ Non-Corrosive Design – Uses capacitive sensing technology, eliminating rust and increasing lifespan.✔ High Sensitivity & Accuracy – Provides precise moisture readings for better plant care.✔ Analog Output – Easily integrates with Arduino, ESP32, Raspberry Pi, and other microcontrollers.✔ Wide Voltage Range – Operates from 3.3V to 5V, making it compatible with various boards.✔ Compact & Easy to Use…
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  • IRF530 N Channel Power MOSFET Transistor Quick View
    • IRF530 N Channel Power MOSFET Transistor Quick View
    • Mosftets, Transistors
    • IRF530 N Channel Power MOSFET Transistor

    • KSh 100.00
    • Specifications; Transistor Polarity: N-channel Maximum Drain-to-source voltage VDS: 100V Maximum continuous drain current ID: 14A Pulse drain current: 56A Maximum power dissipation: 88W Maximum gate-to-source voltage: ±20V Peak diode recovery dv/dt: 5.5V/ns On-state resistance: 0.16Ω Total gate charge Qg: 26nC Operating junction and storage temperature range: -55˚C to +175˚C Package: TO-220AB
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  • IRF730 N Channel Power MOSFET Quick View
    • IRF730 N Channel Power MOSFET Quick View
    • Mosftets, Transistors
    • IRF730 N Channel Power MOSFET

    • KSh 100.00
    • Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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  • IRF830 N-Channel Power MOSFET Quick View
    • IRF830 N-Channel Power MOSFET Quick View
    • Mosftets, Transistors
    • IRF830 N-Channel Power MOSFET

    • KSh 100.00
    • Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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  • IRFZ24N N-Channel Power MOSFET – 55V, 17A Quick View
    • IRFZ24N N-Channel Power MOSFET – 55V, 17A Quick View
    • Mosfets, Mosftets, Transistors
    • IRFZ24N N-Channel Power MOSFET – 55V, 17A

    • KSh 100.00
    • Features: ✔ N-Channel MOSFET – Low on-resistance for high efficiency.✔ High Current Capability – Supports up to 17A continuous drain current.✔ Fast Switching Speed – Ideal for high-speed switching applications.✔ Low Gate Drive Requirements – Compatible with microcontrollers and logic circuits.✔ Durable TO-220 Package – Provides excellent heat dissipation.
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  • IRFZ34N N-Channel Power MOSFET – 55V 30A Quick View
    • IRFZ34N N-Channel Power MOSFET – 55V 30A Quick View
    • Mosftets, Transistors
    • IRFZ34N N-Channel Power MOSFET – 55V 30A

    • KSh 100.00
    • Features: ✔ High Current Handling – Supports up to 30A continuous drain current.✔ Low On-Resistance (Rds ON) – Only 0.035Ω, ensuring minimal power loss.✔ Fast Switching Speed – Ideal for high-frequency applications.✔ Wide Operating Voltage – Can handle up to 55V Vds.✔ TO-220 Package – Easy to mount and integrate into circuits.✔ High Efficiency & Low Heat Dissipation – Perfect…
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  • IRFZ46N Power MOSFET – N-Channel 55V 53A TO-220 Quick View
    • IRFZ46N Power MOSFET – N-Channel 55V 53A TO-220 Quick View
    • Mosfets, Mosftets, Transistors
    • IRFZ46N Power MOSFET – N-Channel 55V 53A TO-220

    • KSh 100.00
    • Features: ✔ High Current Handling – Supports up to 53A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Ensures efficient power transfer with minimal heat dissipation.✔ Fast Switching Speed – Optimized for high-frequency applications.✔ Robust & Reliable – Withstands high power loads, ensuring long-term performance.✔ TO-220 Package – Easy to mount on heat sinks for better thermal dissipation.
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  • IRLZ24N Logic-Level MOSFET – 55V 17A N-Channel Power MOSFET Quick View
    • IRLZ24N Logic-Level MOSFET – 55V 17A N-Channel Power MOSFET Quick View
    • Mosfets, Mosftets, Transistors
    • IRLZ24N Logic-Level MOSFET – 55V 17A N-Channel Power MOSFET

    • KSh 100.00
    • Features: ✔ Logic-Level Gate Drive – Fully turns on with a 5V logic signal.✔ High Current Capacity – Supports up to 17A continuous drain current.✔ Low RDS(on) (0.06Ω) – Reduces heat generation and improves efficiency.✔ Fast Switching Speed – Ideal for PWM, motor drivers, and power applications.✔ Robust Design – Operates at up to 55V Drain-Source Voltage (VDS).✔ TO-220 Package…
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  • IRLZ48N N-Channel MOSFET – 55V, 64A, Logic-Level Quick View
    • IRLZ48N N-Channel MOSFET – 55V, 64A, Logic-Level Quick View
    • Mosfets, Mosftets, Transistors
    • IRLZ48N N-Channel MOSFET – 55V, 64A, Logic-Level

    • KSh 100.00
    • Features: ✔ High Current Handling – Supports up to 64A continuous drain current.✔ Low On-Resistance (R_DS(on)) – Only 16mΩ, ensuring minimal power loss and heat dissipation.✔ Logic-Level Gate Drive – Can be directly driven by 5V logic (Arduino, Raspberry Pi, ESP32).✔ Fast Switching Speed – Ideal for high-frequency switching applications.✔ Robust and Durable – Designed for industrial, automotive, and DIY…
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  • SL7H2BF P-Channel Power MOSFET Quick View
    • SL7H2BF P-Channel Power MOSFET Quick View
    • mosfet, Mosftets, Transistors
    • SL7H2BF P-Channel Power MOSFET

    • KSh 50.00
    • Specifications of SL7H2BF Drain-Source Voltage (Vds): Up to 100V. Continuous Drain Current (Id): Ranges from 20A to 100A. Gate Threshold Voltage (Vgs(th)): Usually between 2V and 4V. Total Gate Charge (Qg): Low, facilitating high-speed switching. Operating Temperature Range: From -55°C to +175°C.
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  • FQP27P06 60V P- Channel MOSFETFQP27P06 60V P- Channel MOSFET Quick View
    • FQP27P06 60V P- Channel MOSFETFQP27P06 60V P- Channel MOSFET Quick View
    • mosfet, Mosftets, Transistors
    • FQP27P06 60V P- Channel MOSFET

    • KSh 100.00
    • Features of FQP27P06 Has -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V It has a low gate charge ( typical 33 nC) Also has a Low Crss ( typical 120 pF) Moreover, its Fast switching In addition 100% avalanche tested Improved dv/dt capability Lastly has 175°C maximum junction temperature rating
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  • IRF520N N-Channel Power MOSFETIRF520N N-Channel Power MOSFET Quick View
    • IRF520N N-Channel Power MOSFETIRF520N N-Channel Power MOSFET Quick View
    • Mosftets, Transistors
    • IRF520N N-Channel Power MOSFET

    • KSh 100.00
    • Features of IRF520N It is an N-Channel Power MOSFET It has a Continuous Drain Current (ID) of 9.2A Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms Gate threshold voltage (VGS-th) is 4V (max) Rise time and fall time is 30nS and 20nS  It is commonly used with Arduino, due to…
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  • IRF640N N-Channel Power MOSFETSIRF640N N-Channel Power MOSFETS Quick View
    • IRF640N N-Channel Power MOSFETSIRF640N N-Channel Power MOSFETS Quick View
    • mosfet, Mosftets, Transistors
    • IRF640N N-Channel Power MOSFETS

    • KSh 100.00
    • Features of IRF640N Has a Dynamic dV/dt Rating Also has a Repetitive Avalanche Rated It has a Logic Level Gate Drive In addition has Simple drive requirements Moreover, has a 175 °C Operating Temperature Has a Fast Switching Lastly, Ease of Paralleling
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  • IRF8010 N Channel MOSFET TransistorIRF8010 N Channel MOSFET Transistor Quick View
    • IRF8010 N Channel MOSFET TransistorIRF8010 N Channel MOSFET Transistor Quick View
    • mosfet, Mosftets, Transistors
    • IRF8010 N Channel MOSFET Transistor

    • KSh 200.00
    • Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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  • IRL520N N-Channel MOSFET TransistorIRL520N N-Channel MOSFET Transistor Quick View
    • IRL520N N-Channel MOSFET TransistorIRL520N N-Channel MOSFET Transistor Quick View
    • mosfet, Mosftets, Transistors
    • IRL520N N-Channel MOSFET Transistor

    • KSh 100.00
    • Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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  • IRL540N N Channel MOSFET TransistorIRL540N N Channel MOSFET Transistor Quick View
    • IRL540N N Channel MOSFET TransistorIRL540N N Channel MOSFET Transistor Quick View
    • mosfet, Mosftets, Transistors
    • IRL540N N Channel MOSFET Transistor

    • KSh 100.00
    • Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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  • IRLZ44N N Channel Power Mosfet TransistorIRLZ44N N Channel Power Mosfet Transistor Quick View
    • IRLZ44N N Channel Power Mosfet TransistorIRLZ44N N Channel Power Mosfet Transistor Quick View
    • mosfet, Mosftets, Transistors
    • IRLZ44N N Channel Power Mosfet Transistor

    • KSh 100.00
    • Features of IRLZ44N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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  • NDP6020P P-Channel Mosfet TransistorNDP6020P P-Channel Mosfet Transistor Quick View
    • NDP6020P P-Channel Mosfet TransistorNDP6020P P-Channel Mosfet Transistor Quick View
    • mosfet, Mosftets, Transistors
    • NDP6020P P-Channel Mosfet Transistor

    • KSh 100.00
    • Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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  • TC4420CPA 6A High Speed Mosfet Driver Quick View
    • TC4420CPA 6A High Speed Mosfet Driver Quick View
    • Mosftets
    • TC4420CPA 6A High Speed Mosfet Driver

    • KSh 100.00
    • Features of TC4420CPA Logic Input Will Withstand Negative Swing Up To 5V Matched Rise and Fall Times: - 25 ns (2500 pF load) High Peak Output Current of 6A Wide Input Supply Voltage Range: - 4.5V to 18V High Capacitive Load Drive Capability: 10,000 pF Short Delay Time: 55 ns (typ.) Low Supply Current With Logic ‘1’ Input: - 450…
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  • TC4424 3A Dual High Speed Power Mosfet DriverTC4424 3A Dual High Speed Power Mosfet Driver Quick View
    • TC4424 3A Dual High Speed Power Mosfet DriverTC4424 3A Dual High Speed Power Mosfet Driver Quick View
    • Mosftets
    • TC4424 3A Dual High Speed Power Mosfet Driver

    • KSh 200.00
    • Features of TC4424 High Peak Output Current  of 3A Wide Operating Range of 4.5V to 18V High Capacitive Load Drive Capability of 1800 pF in 25nsec Short Delay Times of 40nsec Typ Matched Rise/Fall Times Low Supply Current — With Logic "1" Input - 3.5 mA — With Logic "0" Input -350 µA Low Output Impedance of 3.5Ω Typ Also…
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At Nipetech, we are passionate about innovation and technology. As an online shop specializing in electronic components, we provide high-quality parts.

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