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- SolidWorks
Controller Interface 3D Model (SolidWorks & STEP)
- KSh 500.00
- ✅ 1602 LCD Display Slot ✅ Membrane Keypad Area ✅ Power & Control Buttons ✅ LED Indicator Holes ✅ Easy-to-Print Design
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- Sensors
Current Sensor Module ACS712 Module 5 A
- KSh 500.00
- Features of Current Sensor Module ACS712 includes; It has 80kHz bandwith Has a 66 to 185 mV/A output sensitivity Low noise analog signal path It also has a 1.2 mΩ internal conductor resistance Total output error of 1.5% at TA = 25°C
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- Sensors
High Sensitivity Sound Sensor module (Microphone)
- KSh 400.00
- High Sensitivity Sound Sensor module gives a simple way to detect sound and is generally used for detecting sound intensity. Features of Sound Sensor Module Operating voltage of between 3.3V to 5V. PCB size: 3.4cm * 1.6cm. Output model: digital switch outputs (0 and 1, high or low level) Microphone supplies the input to an amplifier, peak detector and buffer.
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- mosfet
IRF510 N Channel Power MOSFET
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Drain-to-source voltage VDS: 100V Drain-to-source current ID: 5.6A On-state resistance (drain-to-source resistance) RDS: 0.54Ω Operating temperature range: -55˚C to 175˚C Gate charge Qg: 8.3nC Gate-source voltage VGS: ±20V Maximum power dissipation: 43W Maximum voltage required to conduct: 2V to 4V Package type: TO-220AB
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- Mosftets, Transistors
IRF530 N Channel Power MOSFET Transistor
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Maximum Drain-to-source voltage VDS: 100V Maximum continuous drain current ID: 14A Pulse drain current: 56A Maximum power dissipation: 88W Maximum gate-to-source voltage: ±20V Peak diode recovery dv/dt: 5.5V/ns On-state resistance: 0.16Ω Total gate charge Qg: 26nC Operating junction and storage temperature range: -55˚C to +175˚C Package: TO-220AB
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- Uncategorized
IRF630 N-Channel Power MOSFET
- KSh 100.00
- Specifications; Channel Type: N Channel Drain Source Voltage Vds: 200V Continuous Drain Current Id: 9A Drain Source On State Resistance: 0.4ohm Transistor Case Style: TO-220 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V
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- Mosftets, Transistors
IRF730 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package Type: TO-220AB And TO-220 Transistor Type: N Channel Max Voltage Applied From Drain to Source: 400V Max Gate to Source Voltage Should Be: ±20V Max Continues Drain Current is : 5.5A Max Pulsed Drain Current is: 22A Max Power Dissipation is: 75W Minimum Voltage Required to Conduct: 2V to 4V Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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- Uncategorized
IRF740 N Channel Power MOSFET
- KSh 100.00
- Specifications; Package: TO-220. Drain-to-Source Breakdown Voltage: 400 V. Gate-to-Source Breakdown Voltage: +/- 20 V. Hole Diameter: 3.8mm (0.15in) Weight: 2g (0.07oz) Continuous Drain Current: 10 A (with adequate heat sinking, consider our TO-220 Heat Sink Set) Minimum Operating Temperature: -55°C. Maximum Operating Temperature: 150°C. Pin Spacing Pitch: 2.54mm (0.1in)
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- Mosftets, Transistors
IRF830 N-Channel Power MOSFET
- KSh 100.00
- Type of Control Channel: N-Channel Number of Channels: 1 Channel Max Drain-Source Voltage: 500 V Max Drain Current: 4.5A Transistor Case Style: TO-220-3 Transistor Mounting: Through Hole Max Gate-Source Voltage: ±20 V Max Gate-Threshold Voltage: 4 V
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- Mosfets, Mosftets, Transistors
IRFZ24N N-Channel Power MOSFET – 55V, 17A
- KSh 100.00
- Features: ✔ N-Channel MOSFET – Low on-resistance for high efficiency.✔ High Current Capability – Supports up to 17A continuous drain current.✔ Fast Switching Speed – Ideal for high-speed switching applications.✔ Low Gate Drive Requirements – Compatible with microcontrollers and logic circuits.✔ Durable TO-220 Package – Provides excellent heat dissipation.
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