IRF730 N Channel Power MOSFET

KSh 100.00

Specifications;

  • Package Type: TO-220AB And TO-220
  • Transistor Type: N Channel
  • Max Voltage Applied From Drain to Source: 400V
  • Max Gate to Source Voltage Should Be: ±20V
  • Max Continues Drain Current is : 5.5A
  • Max Pulsed Drain Current is: 22A
  • Max Power Dissipation is: 75W
  • Minimum Voltage Required to Conduct: 2V to 4V
  • Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

10 in stock

Description

IRF730 is an N-channel MOSFET available in TO-220 and TO-220AB packages. This MOSFET can drive a load of up to 5.5A with a load voltage of 400V and the maximum power dissipation of the transistor is 75 Watts, moreover, the maximum pulse drain current of this transistor is 22A.

Features include;

  • Repetitive Avalanche Rated
  • Fast switching
  • High thermal cycling performance
  • Low thermal resistance

Applications of IRF730;

  • Telecommunication applications
  • High voltage applications
  • Relay driving applications
  • Battery Chargers and BMS Circuits
  • Uninterrupted power supplies
  • Motor Drivers

Specifications;

  • Package Type: TO-220AB And TO-220
  • Transistor Type: N Channel
  • Max Voltage Applied From Drain to Source: 400V
  • Max Gate to Source Voltage Should Be: ±20V
  • Max Continues Drain Current is : 5.5A
  • Max Pulsed Drain Current is: 22A
  • Max Power Dissipation is: 75W
  • Minimum Voltage Required to Conduct: 2V to 4V
  • Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

Datasheet

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