IRF640N N-Channel Power MOSFETS
KSh 100.00
Features of IRF640N
- Has a Dynamic dV/dt Rating
- Also has a Repetitive Avalanche Rated
- It has a Logic Level Gate Drive
- In addition has Simple drive requirements
- Moreover, has a 175 °C Operating Temperature
- Has a Fast Switching
- Lastly, Ease of Paralleling
Description
IRF640N is an N Channel MOSFET. It is fast switching and has a ruggedized device design. It is also low on resistance and cost effective. In addition, its universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 W. Because of its low thermal resistance and low package cost of the TO-220AB, its wide accepted throughout the industry.
Features of IRF640N
- Has a Dynamic dV/dt Rating
- Also has a Repetitive Avalanche Rated
- It has a Logic Level Gate Drive
- In addition has Simple drive requirements
- Moreover, has a 175 °C Operating Temperature
- Has a Fast Switching
- Lastly, Ease of Paralleling
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