IRF530 N Channel Power MOSFET Transistor

Description

IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A. It is designed to operate with a low gate driving current. This MOSFET can operate in the temperature range of -55˚C to +175 ˚C.

Features include;

• ‘Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
• Dynamic dV/dt rating
• Repetitive avalanche-rated
• 175 °C operating temperature
• Ease of paralleling
• Simple drive requirements

Applications of IRF530;

• d.c. to d.c. converters
• Switched mode power supplies

Specifications;

• Transistor Polarity: N-channel
• Maximum Drain-to-source voltage V_DS: 100V
• Maximum continuous drain current I_D: 14A
• Pulse drain current: 56A
• Maximum power dissipation: 88W
• Maximum gate-to-source voltage: ±20V
• Peak diode recovery dv/dt: 5.5V/ns
• On-state resistance: 0.16Ω
• Total gate charge Q_g: 26nC
• Operating junction and storage temperature range: -55˚C to +175˚C
• Package: TO-220AB

Datasheet

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