IRF520N N-Channel Power MOSFET
KSh 100.00
Features of IRF520N
- It is an N-Channel Power MOSFET
- It has a Continuous Drain Current (ID) of 9.2A
- Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms
- Gate threshold voltage (VGS-th) is 4V (max)
- Rise time and fall time is 30nS and 20nS
- It is commonly used with Arduino, due to its low threshold voltage.
- Lastly, available in To-220 package
25 in stock
Description
IRF520N is an N Channel Power Mosfet. It has a 9.2A collector current and 100V breakdown voltage. To add on that, it has a low gate threshold voltage of 4V. Hence commonly used with micro controllers like Arduino for switching high current loads.
Features of IRF520N
- It is an N-Channel Power MOSFET
- It has a Continuous Drain Current (ID) of 9.2A
- Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms
- Gate threshold voltage (VGS-th) is 4V (max)
- Rise time and fall time is 30nS and 20nS
- It is commonly used with Arduino, due to its low threshold voltage.
- Lastly, available in To-220 package
Applications
- Used in Switching high power devices
- Also in Control speed of motors
- It is also used in LED dimmers or flashers
- Additionally, in high Speed switching applications
- Moreover, in Converters or Inverter circuits
IRF520N Alternatives
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Additional information
Weight | 25 kg |
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