IRF520N N-Channel Power MOSFET

KSh 100.00

Features of IRF520N

  • It is an N-Channel Power MOSFET
  • It has a Continuous Drain Current (ID) of 9.2A
  • Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms
  • Gate threshold voltage (VGS-th) is 4V (max)
  • Rise time and fall time is 30nS and 20nS 
  • It is commonly used with Arduino, due to its low threshold voltage.
  • Lastly, available in To-220 package

25 in stock

Categories: , Tags: ,

Description

IRF520N is an N Channel Power Mosfet. It has a 9.2A collector current and 100V breakdown voltage. To add on that, it has a low gate threshold voltage of 4V. Hence commonly used with micro controllers like Arduino for switching high current loads.

Features of IRF520N

  • It is an N-Channel Power MOSFET
  • It has a Continuous Drain Current (ID) of 9.2A
  • Has a Drain to Source Breakdown Voltage of 100V and a Drain Source Resistance (RDS) of 0.27 Ohms
  • Gate threshold voltage (VGS-th) is 4V (max)
  • Rise time and fall time is 30nS and 20nS 
  • It is commonly used with Arduino, due to its low threshold voltage.
  • Lastly, available in To-220 package

Applications

  • Used in Switching high power devices
  • Also in Control speed of motors
  • It is also used in LED dimmers or flashers
  • Additionally, in high Speed switching applications
  • Moreover, in Converters or Inverter circuits

Datasheet

IRF520N Alternatives

IRF540NIRF320

/ / / / /// / // / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / /

 

 

Additional information

Weight 25 kg

Reviews

There are no reviews yet.

Be the first to review “IRF520N N-Channel Power MOSFET”

Your email address will not be published. Required fields are marked *