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- mosfet, Mosftets, Transistors
IRL520N N-Channel MOSFET Transistor
- KSh 100.00
- Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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- mosfet, Mosftets, Transistors
IRL540N N Channel MOSFET Transistor
- KSh 100.00
- Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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