irf510

  • IRF510 N Channel Power MOSFET Quick View
    • IRF510 N Channel Power MOSFET Quick View

    • IRF510 N Channel Power MOSFET

    • KSh 100.00
    • Specifications; Transistor Polarity: N-channel Drain-to-source voltage VDS: 100V Drain-to-source current ID: 5.6A On-state resistance (drain-to-source resistance) RDS: 0.54Ω Operating temperature range: -55˚C to 175˚C Gate charge Qg: 8.3nC Gate-source voltage VGS: ±20V Maximum power dissipation: 43W Maximum voltage required to conduct: 2V to 4V Package type: TO-220AB
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