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- mosfet
IRF510 N Channel Power MOSFET
- KSh 100.00
- Specifications; Transistor Polarity: N-channel Drain-to-source voltage VDS: 100V Drain-to-source current ID: 5.6A On-state resistance (drain-to-source resistance) RDS: 0.54Ω Operating temperature range: -55˚C to 175˚C Gate charge Qg: 8.3nC Gate-source voltage VGS: ±20V Maximum power dissipation: 43W Maximum voltage required to conduct: 2V to 4V Package type: TO-220AB
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- mosfet, Mosftets, Transistors
SL7H2BF P-Channel Power MOSFET
- KSh 50.00
- Specifications of SL7H2BF Drain-Source Voltage (Vds): Up to 100V. Continuous Drain Current (Id): Ranges from 20A to 100A. Gate Threshold Voltage (Vgs(th)): Usually between 2V and 4V. Total Gate Charge (Qg): Low, facilitating high-speed switching. Operating Temperature Range: From -55°C to +175°C.
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- mosfet, Mosftets, Transistors
FQP27P06 60V P- Channel MOSFET
- KSh 100.00
- Features of FQP27P06 Has -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V It has a low gate charge ( typical 33 nC) Also has a Low Crss ( typical 120 pF) Moreover, its Fast switching In addition 100% avalanche tested Improved dv/dt capability Lastly has 175°C maximum junction temperature rating
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- mosfet, Transistors, Uncategorized
IRF540N N-Channel Power MOSFET
- KSh 100.00
- Features of IRF540N It is a small signal N-Channel MOSFET It has a Continuous Drain Current of 33A at 25°C Pulsed Drain Current is 110A Minimum Gate threshold voltage of 2V Gate Source Voltage of ±20V Maximum Drain Source Voltage of 100V Both Turn ON and Turn off time is 35ns It is commonly used with Arduino, due to its low threshold current. Available…
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- mosfet, Mosftets, Transistors
IRF640N N-Channel Power MOSFETS
- KSh 100.00
- Features of IRF640N Has a Dynamic dV/dt Rating Also has a Repetitive Avalanche Rated It has a Logic Level Gate Drive In addition has Simple drive requirements Moreover, has a 175 °C Operating Temperature Has a Fast Switching Lastly, Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRF8010 N Channel MOSFET Transistor
- KSh 200.00
- Specifications; Type Designator: IRF8010 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 260 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 80 A Total Gate Charge (Qg): 81 nC Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm Package: TO220AB
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- mosfet, Mosftets, Transistors
IRL520N N-Channel MOSFET Transistor
- KSh 100.00
- Specifications; Type: n-channel Drain to Source Breakdown Voltage: 100 V Gate to Source Voltage, max: ±16 V Drain-Source On State Resistance, max: 180.000 Ohm Continuous Drain Current: 10 A Total Gate Charge: 13.3 nC Power Dissipation: 48 W Package: TO-220AB
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- mosfet, Mosftets, Transistors
IRL540N N Channel MOSFET Transistor
- KSh 100.00
- Features of IRL540N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
IRLZ44N N Channel Power Mosfet Transistor
- KSh 100.00
- Features of IRLZ44N Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling
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- mosfet, Mosftets, Transistors
NDP6020P P-Channel Mosfet Transistor
- KSh 100.00
- Specifications; Type Designator: NDP6020P Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 60 W Maximum Drain-Source Voltage |Vds|: 20 V Maximum Gate-Source Voltage |Vgs|: 8 V Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V Maximum Drain Current |Id|: 24 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 35 nC Maximum Drain-Source On-State Resistance…
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